Realization of high performance ferroelectric-gate FET nonvolatile memory using p-type Si nanowire channel

We successfully fabricated ferroelectric-gate nonvolatile memory devices using a p-type Si nanowire coated with Omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene). Our FEFET memory devices exhibits excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding 10⁵, a long retention time of over 5×10⁴ sec and a high endurance of over 10⁵ programming cycles while maintaining an I_ON/I_OFF ratio higher than 10³. This result offers a viable way to fabricate a high performance, high density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.