Title :
1.5-kV (reverse breakdown) AlGaN/GaN lateral Schottky barrier diode on a Si substrate by surface-O2 treatment
Author :
Ha, Min-Woo ; Woo, Hyunseok ; Roh, Cheong Hyun ; Hahn, Cheol-Koo ; Seok, Ogyun ; Han, Min-Koo
Author_Institution :
Compound Semicond. Devices Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea
Abstract :
A high-voltage GaN Schottky barrier diode (SBD) on a Si substrate was fabricated by surface-O2 treatment. The surface of the active area was annealed in O2 ambient at 800 oC after Ohmic-contact formation. The isolation-leakage current, which flowing from a mesa to another one, was considerably suppressed from 2.4×10-3 to 2.7×10-10 A/mm at 100 V by O2 treatment. The device leakage current was also decreased from 2.4×10-2 to 1.7×10-4 mA/mm at -100 V. The O2 treatment seems to form group-III oxides on the surface which may passivate surface states. The breakdown voltage of O2-treated GaN SBDs with a drift length of 5, 10, and 20 μm were 700, 1400, and 1530 V, respectively.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; power semiconductor diodes; surface treatment; wide band gap semiconductors; AlGaN-GaN; Si; active area surface; annealing; group-III oxides; high-voltage Schottky barrier diode; isolation-leakage current; lateral Schottky barrier diode; ohmic-contact formation; passivate surface states; surface-treatment; temperature 800 degC; voltage -100 V; voltage 1.5 kV; voltage 100 V; voltage 1400 V; voltage 1530 V; voltage 700 V; Current measurement; Gallium nitride; Leakage current; Schottky barriers; Silicon; Substrates; Surface treatment; AlGaN; GaN; O2 treatment; SBD; power device;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316997
