Title :
Quasi-cross lattice tilings with applications to flash memory
Author_Institution :
Electr. & Comput. Eng., Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel
fDate :
July 31 2011-Aug. 5 2011
Abstract :
We consider lattice tilings of ℝn by a shape we call a (k+, k-, n)-quasi-cross. Such lattices form perfect error-correcting codes which correct a single limited-magnitude error with prescribed maximal-magnitudes of positive error and negative error (the ratio of which is called the balance ratio). These codes can be used to correct both disturb and retention errors in flash memories, which are characterized by having limited magnitudes and different signs. We construct infinite families of perfect codes for any rational balance ratio, and provide a specific construction for (2, 1, n)-quasi-cross lattice tiling. The constructions are related to group splitting and modular B1 sequences. We also study bounds on the parameters of lattice-tilings by quasi-crosses, connecting the arm lengths of the quasi-crosses and the dimension. We also prove constraints on group splitting, a specific case of which shows that the parameters of the lattice tiling by (2, 1, n)-quasi-crosses is the only ones possible.
Keywords :
error correction codes; flash memories; lattice theory; arm lengths; disturb errors; flash memory; group splitting; infinite family; lattice-tilings; maximal-magnitudes; modular sequences; negative error; perfect codes; perfect error-correcting codes; positive error; quasi-cross lattice tilings; quasi-crosses; rational balance ratio; retention errors; single limited-magnitude error; Ash; Error correction codes; Lattices; Modulation; Silicon; Tiles; Zinc;
Conference_Titel :
Information Theory Proceedings (ISIT), 2011 IEEE International Symposium on
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4577-0596-0
Electronic_ISBN :
2157-8095
DOI :
10.1109/ISIT.2011.6033934