Title :
Silicon-based waveguide materials for integrated optics
Author :
Pernas, P.L. ; Piqueras, J. ; Torchia, G.A. ; Climent-Font, A. ; Jaque, F.
Author_Institution :
Departamento de Fisica Aplicada CXII, Univ. Autonoma de Madrid, Spain
Abstract :
In this work we present results of Si/SiO2/SiON/SiO2 waveguides fabricated by means of ECR-PECVD. In order to change refraction index and simultaneously to reduce losses related with hydrogen, we have used N2 as precursor gas for controlling the nitrogen to oxygen relation. The composition of the samples were carefully controlled by RBS and ERDA analysis. In this paper we also present results of channel waveguides fabricated on silicon oxynitride material by using infrared femtosecond laser pulses. This approach is based on Si/SiO2/SiON/SiO2 planar waveguides previously fabricated and show low propagation losses.
Keywords :
Rutherford backscattering; high-speed optical techniques; integrated optics; laser materials processing; optical fabrication; optical losses; optical materials; optical waveguides; plasma CVD; plasma radiofrequency heating; refractive index; silicon; silicon compounds; ECR-PECVD; ERDA analysis; RBS analysis; Si-SiO2-SiON-SiO2; Si/SiO2/SiON/SiO2 waveguides; channel waveguides; infrared femtosecond laser pulses; integrated optics; propagation losses; refraction index; silicon oxynitride material; silicon-based waveguide materials; Gas lasers; Hydrogen; Integrated optics; Nitrogen; Optical losses; Optical materials; Optical refraction; Optical waveguides; Silicon; Ultrafast optics;
Conference_Titel :
Fibres and Optical Passive Components, 2005. Proceedings of 2005 IEEE/LEOS Workshop on
Print_ISBN :
0-7803-8949-2
DOI :
10.1109/WFOPC.2005.1462162
