Title :
One and two dimensional device simulation of GTO using finite element method
Author :
Sakata, Hiroshi ; Sugimoto, Kenji ; Isomura, Shigehiro ; Masada, Eisuke
Abstract :
From the fundamental equations of semiconductor devices, potential distribution and carrier concentrations can be solved using the finite element method. Formulation for one and two dimensional analysis of a gate turn off thyristor (GTO) was made. The finite element method is compared with the finite difference method with respect to convergence and CPU time. The effects of snubber circuits and double gate structure on switching characteristics were studied. Using a two dimensional model of a GTO, the effects of anode short structure on turn on and turn off were also studied.<>
Keywords :
finite element analysis; semiconductor device models; switching circuits; thyristors; 1D; 2D; CPU time; FEM; GTO; anode; carrier concentrations; convergence; double gate structure; finite difference method; finite element method; potential distribution; semiconductor device models; simulation; snubber circuits; switching circuits; turn off; turn on; Anodes; Central Processing Unit; Convergence; Equations; Finite difference methods; Finite element methods; Semiconductor devices; Snubbers; Switching circuits; Thyristors;
Conference_Titel :
Power Conversion Conference, 1993. Yokohama 1993., Conference Record of the
Conference_Location :
Yokohama, Japan
Print_ISBN :
0-7803-0471-3
DOI :
10.1109/PCCON.1993.264193
