One and two dimensional device simulation of GTO using finite element method

Author

Sakata, Hiroshi ; Sugimoto, Kenji ; Isomura, Shigehiro ; Masada, Eisuke

fYear

1993

fDate

19-21 April 1993

Firstpage

569

Lastpage

574

Abstract

From the fundamental equations of semiconductor devices, potential distribution and carrier concentrations can be solved using the finite element method. Formulation for one and two dimensional analysis of a gate turn off thyristor (GTO) was made. The finite element method is compared with the finite difference method with respect to convergence and CPU time. The effects of snubber circuits and double gate structure on switching characteristics were studied. Using a two dimensional model of a GTO, the effects of anode short structure on turn on and turn off were also studied.<>

Keywords

finite element analysis; semiconductor device models; switching circuits; thyristors; 1D; 2D; CPU time; FEM; GTO; anode; carrier concentrations; convergence; double gate structure; finite difference method; finite element method; potential distribution; semiconductor device models; simulation; snubber circuits; switching circuits; turn off; turn on; Anodes; Central Processing Unit; Convergence; Equations; Finite difference methods; Finite element methods; Semiconductor devices; Snubbers; Switching circuits; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Conversion Conference, 1993. Yokohama 1993., Conference Record of the

Conference_Location

Yokohama, Japan

Print_ISBN

0-7803-0471-3

Type

conf

DOI

10.1109/PCCON.1993.264193

Filename

264193