Two methods to control ion energy and influx to substrate in an ICP with superimposed magnetic field

Summary form only given. Plasma-wall interactions play an important role in low temperature, low pressure applications of plasmas. In case of thin film deposition the microstructure and morphology as well as the stoichiometry of the film depend on the energetic conditions at the surface. In many situations the ion contribution is a determined factor. Our plasma is produced by an inductively coupled RF discharge with an additional small static magnetic field (few mTesla). The earth free single turn inductive coil comes in contact with plasma. By using a mesh grid the geometric space was divided in two parts: plasma source and diffusion (deposition) plasma. The control of ion contribution can be made by trying to change the discharge macroscopic parameters like RF power, gas flow, gas pressure etc. These possibilities have their limits anyway.