DocumentCode
3507678
Title
A low glitch 14-bit 100 MHz D/A converter
Author
Tesch, Bruce J. ; Garcia, Juan C.
Author_Institution
Harris Semicond., Melbourne, FL, USA
fYear
1996
fDate
29 Sep-1 Oct 1996
Firstpage
204
Lastpage
207
Abstract
A low glitch 14-bit 100 MHz BiCMOS current output digital-to-analog converter (DAC) is described. In addition to segmentation of the four most significant bits (MSBs) into fifteen equally weighted current sources, a proportional-to-absolute-temperature (PTAT) switching voltage is applied to the current steering devices to minimize glitch over temperature. An innovative bidirectional trim network minimizes the amount of laser trim required to achieve 14-bit accuracy, resulting in less post-trim degradation of integral and differential nonlinearity (INL and DNL) over temperature and lifetime of the chip. High β n-p-n devices were used in the precision current cells and switches to reduce post-trim degradation of DAC linearity over temperature. The converter has been fabricated in a 4 GHz/1.4 μm BiCMOS technology and exhibits a measured glitch energy of 0.5 pV-s (singlet). Settling time to within ±0.024% of the final value is 20 ns for both rising and falling edges of a full scale step. Spurious free dynamic range (SFDR) for the described converter is 87 dBc at a clock rate of 10 MHz and an output frequency of 2.03 MHz. The converter operates from +5 V and -5.2 V supplies and consumes 650 mW independent of conversion rate. The chip size is 4.09 mm ×4.09 mm which includes bond pads and electrostatic discharge (ESD) protection devices
Keywords
BiCMOS integrated circuits; digital-analogue conversion; electrostatic discharge; protection; -5.2 V; 1.4 micron; 100 MHz; 14 bit; 5 V; 650 mW; BiCMOS current output DAC; D/A converter; ESD protection devices; bidirectional trim network; current steering devices; electrostatic discharge protection; equally weighted current sources; low glitch DAC; proportional-to-absolute-temperature switching voltage; segmentation; BiCMOS integrated circuits; Degradation; Digital-analog conversion; Electrostatic discharge; Energy measurement; Linearity; Semiconductor device measurement; Switches; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-3516-3
Type
conf
DOI
10.1109/BIPOL.1996.554648
Filename
554648
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