Title :
A low glitch 14-bit 100 MHz D/A converter
Author :
Tesch, Bruce J. ; Garcia, Juan C.
Author_Institution :
Harris Semicond., Melbourne, FL, USA
fDate :
29 Sep-1 Oct 1996
Abstract :
A low glitch 14-bit 100 MHz BiCMOS current output digital-to-analog converter (DAC) is described. In addition to segmentation of the four most significant bits (MSBs) into fifteen equally weighted current sources, a proportional-to-absolute-temperature (PTAT) switching voltage is applied to the current steering devices to minimize glitch over temperature. An innovative bidirectional trim network minimizes the amount of laser trim required to achieve 14-bit accuracy, resulting in less post-trim degradation of integral and differential nonlinearity (INL and DNL) over temperature and lifetime of the chip. High β n-p-n devices were used in the precision current cells and switches to reduce post-trim degradation of DAC linearity over temperature. The converter has been fabricated in a 4 GHz/1.4 μm BiCMOS technology and exhibits a measured glitch energy of 0.5 pV-s (singlet). Settling time to within ±0.024% of the final value is 20 ns for both rising and falling edges of a full scale step. Spurious free dynamic range (SFDR) for the described converter is 87 dBc at a clock rate of 10 MHz and an output frequency of 2.03 MHz. The converter operates from +5 V and -5.2 V supplies and consumes 650 mW independent of conversion rate. The chip size is 4.09 mm ×4.09 mm which includes bond pads and electrostatic discharge (ESD) protection devices
Keywords :
BiCMOS integrated circuits; digital-analogue conversion; electrostatic discharge; protection; -5.2 V; 1.4 micron; 100 MHz; 14 bit; 5 V; 650 mW; BiCMOS current output DAC; D/A converter; ESD protection devices; bidirectional trim network; current steering devices; electrostatic discharge protection; equally weighted current sources; low glitch DAC; proportional-to-absolute-temperature switching voltage; segmentation; BiCMOS integrated circuits; Degradation; Digital-analog conversion; Electrostatic discharge; Energy measurement; Linearity; Semiconductor device measurement; Switches; Temperature; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.554648