IGBT module with user accessible on-chip current and temperature sensors

This paper describes the characteristics of a new power module having user accessible on-chip temperature and current sensing features. Temperature sensing is accomplished by measuring the forward voltage drop of a string of diodes fabricated on the IGBT chip´s surface. Current sensing is accomplished using a current mirror structure that diverts a small portion of the main emitter current to an auxiliary “sense” emitter. The on-chip sensing features are directly accessible to the end user enabling control and protection to be tailored to the specific needs of the intended application. The new module also features a unique transfer molded structure that is designed to function as a “known-good” building block for use in a wide range of power electronic assemblies.