Title :
IGBT module with user accessible on-chip current and temperature sensors
Author :
Motto, Eric R. ; Donlon, John F.
Author_Institution :
Powerex Inc., Youngwood, PA, USA
Abstract :
This paper describes the characteristics of a new power module having user accessible on-chip temperature and current sensing features. Temperature sensing is accomplished by measuring the forward voltage drop of a string of diodes fabricated on the IGBT chip´s surface. Current sensing is accomplished using a current mirror structure that diverts a small portion of the main emitter current to an auxiliary “sense” emitter. The on-chip sensing features are directly accessible to the end user enabling control and protection to be tailored to the specific needs of the intended application. The new module also features a unique transfer molded structure that is designed to function as a “known-good” building block for use in a wide range of power electronic assemblies.
Keywords :
electric potential; insulated gate bipolar transistors; modules; power bipolar transistors; power semiconductor diodes; temperature sensors; transfer moulding; IGBT chip surface; IGBT module; auxiliary sense emitter; current mirror structure; emitter current; forward voltage drop; known-good building block; on-chip sensing features; power electronic assembly; power module; temperature sensors; transfer molded structure; user accessible on-chip current sensing features; user accessible on-chip temperature sensing features; Assembly; Insulated gate bipolar transistors; Temperature measurement; Temperature sensors; Thermal conductivity; Wires; Electric vehicle inverter; Insulated gate bipolar transistors; Transfer molded module;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1215-9
Electronic_ISBN :
978-1-4577-1214-2
DOI :
10.1109/APEC.2012.6165816
