Very large arrays of flip-chip bonded 1.55-/spl mu/m photodiodes for spectroscopic monitoring of WDM networks

Summary form only given. We have demonstrated and analyzed very large arrays of flip-chip bonded InGaAs/InP photodetectors, in particular paying attention to how their series and shunt resistances affect zero-bias photocurrent and therefore yield for spectrometer applications. Our device design results in very low series resistance of the diode and high photocurrent collection efficiency at zero-bias. It was shown that for an integrated circuit array wherein attention is paid to eliminating resistance between the flip-chip bonding pad and the feedback resistor node, the effect of leaky diodes is nearly eliminated.