Title :
The role of bipolar structures in a power MOS process
Author :
Marshall, Andrew ; Teggatz, Ross
Author_Institution :
Texas Instrum. Inc., USA
fDate :
29 Sep-1 Oct 1996
Abstract :
Modern power IC processes usually optimize DMOS outputs, with little emphasis on bipolar structures, for wafer cost reasons. We describe the role of bipolar structures in a high efficiency power IC process, and design techniques to allow use of non-optimized bipolar devices
Keywords :
MOS integrated circuits; current limiters; electrostatic discharge; integrated circuit design; power integrated circuits; protection; DMOS outputs; ESD structures; bipolar structures; current limiting circuits; design techniques; nonoptimized bipolar devices; power MOS process; Automotive engineering; Circuit simulation; Current supplies; MOS devices; Photonic band gap; Resistors; Switches; Temperature sensors; Thermal resistance; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3516-3
DOI :
10.1109/BIPOL.1996.554649
