A new technique for finding sub-threshold current of MOSFETs

A new technique for finding sub-threshold current of MOSFETs is proposed. In this approach, first 1-D Poisson´s equation for potential within the depletion region formed beneath the SiO₂-Si interface is solved. The solution gives potential as a function of the distance along the width the of the depletion region. The intersection of the tangent of the potential curve at the interface with the distance axis gives the effective thickness of the channel. The new effective channel thickness is applied for finding new expression of sub-threshold current. The result of this model is compared with previous models and found smaller sub-threshold current.