InGaAs focal plane arrays for near-infrared imaging and spectroscopy

Summary form only given. Area and linear focal plane arrays (FPAs) fabricated from the indium gallium arsenide (InGaAs) ternary system exhibit low noise and high detectivity when operated at room temperature. By varying the indium content of the alloy, the entire near-infrared spectrum from 1.0 to 2.5 /spl mu/m can be detected. Important examples include the incorporation of linear arrays in spectroscopic instruments used for the control and monitoring of wavelength division multiplexed laser sources, and the use of area cameras for low-light-level imaging, eye-safe laser range finding, camouflage detection, and subsurface art inspection. Area FPAs with formats as large as 320/spl times/240 pixels and linear arrays as long as 512 pixels are commercially available. Significant progress has been made in monolithically integrating InGaAs p-i-n diode arrays with InP JFET readout electronics. In this presentation, the fabrication and performance of hybrid devices and the status of the development of monolithic devices will be described and examples of key applications presented.