Title :
Further refinements to an optimum gate drive for high power GTO thyristors
Author :
Szilagyi, P. ; Narui, M. ; Dawson, F.P.
Author_Institution :
Sault Coll., Sault Ste. Maris, Ont., Canada
Abstract :
The authors discuss further refinements to a previously described gate/base drive for a current-controlled type semiconductor device such as a GTO or a bipolar transistor. This gate drive is a MOSFET-based current shaping circuit designed to minimize gate driver power supply losses and gate and turn-on losses in high power GTOs. It can be easily modified to drive GTOs of different ratings by altering reference signals for the gate current. Gate current monitoring using current-sensing MOSFETs, GTO on/off detection, specification of gate drive power supplies, and changes to the logic implementation are discussed, with experimental results shown.<>
Keywords :
driver circuits; insulated gate field effect transistors; power supply circuits; thyristor applications; MOSFET-based current shaping circuit; bipolar transistor; current monitoring; current-controlled type semiconductor device; gate drive power supplies; gate driver power supply losses; high power GTO thyristors; optimum gate drive; turn-on losses; Driver circuits; Drives; MOSFETs; Monitoring; Power harmonic filters; Power supplies; Pulse width modulation; Pulse width modulation inverters; Thyristors; Voltage;
Conference_Titel :
Power Conversion Conference, 1993. Yokohama 1993., Conference Record of the
Conference_Location :
Yokohama, Japan
Print_ISBN :
0-7803-0471-3
DOI :
10.1109/PCCON.1993.264249
