DocumentCode
3508507
Title
A steel pressure sensor based on micro-fused glass frit technology
Author
Zongyang Zhang ; Xingguo Cheng ; Xulong Gui ; Xiaojie Chen ; Sheng Liu
Author_Institution
State Key Lab. for Digital Manuf. Equip. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear
2012
fDate
13-16 Aug. 2012
Firstpage
1582
Lastpage
1585
Abstract
In this paper, we propose a pressure sensor using strain gages bonded on 17-4PH stainless steel (SS) diaphragm based on micro-fused glass frit technology. The strain gages with uniform resistance are obtained by growing an epi-silicon layer on a single crystal silicon wafer using epitaxial deposition technique rather than conventional photolithography and etching techniques. The inorganic micro-fused glass frits are used as the bonding material between the strain gages and the 17-4PH SS diaphragm. Compared to organic adhesives, the glass frits bonding material can minimize the hysteresis error in the high temperature applications and improve the mechanical properties of semiconductor strain gage based pressure transducers. After wire bonds being made between the two half bridge strain gages and an interface printed circuit board (PCB), the output characteristics of sensors are evaluated. Results show that the sensors exhibit a stable output with 0.045% full-scale (FS) hysteresis error, and linearity and repeatability are less than 0.04% FS 0.12% FS at the room temperature. Furthermore, the output performance of sensors in the high temperature of 125 °C almost equals that of the room temperature, which indicates that the glass frit bonding is a good method which would lead to a significant advance in the high temperature applicability of silicon strain gage transducers.
Keywords
pressure sensors; pressure transducers; printed circuits; silicon; stainless steel; strain gauges; 17-4PH SS diaphragm; 17-4PH stainless steel diaphragm; FS hysteresis error; Si; bonding material; epi-silicon layer; epitaxial deposition technique; etching techniques; full-scale hysteresis error; glass frit bonding material; half bridge strain gages; inorganic microfused glass frit technology; interface PCB; interface printed circuit board; organic adhesives; photolithography techniques; pressure transducers; semiconductor strain gage mechanical properties; silicon strain gage transducers; single crystal silicon wafer; steel pressure sensor; temperature 125 degC; temperature 293 K to 298 K; Abstracts; Educational institutions; Epitaxial growth; Periodic structures; Reliability; Temperature; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4673-1682-8
Electronic_ISBN
978-1-4673-1680-4
Type
conf
DOI
10.1109/ICEPT-HDP.2012.6474909
Filename
6474909
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