• DocumentCode
    3508578
  • Title

    Sinter-attach of high-temperature sensors for deep-drilling monitoring

  • Author

    Kahler, J. ; Stranz, Andrej ; Peiner, Erwin ; Waag, Andreas

  • Author_Institution
    Inst. of Semicond. Technol., Tech. Univ. Braunschweig, Braunschweig, Germany
  • fYear
    2012
  • fDate
    13-16 Aug. 2012
  • Firstpage
    1594
  • Lastpage
    1599
  • Abstract
    An optimized fabrication process for high-temperature piezoresistive vibration sensors made of p-doped double-layer SOI material is described. Thus, an easy and straightforward production of very precise sensor geometries is now feasible. Subsequently, it is demonstrated that sintering of silver particles can be successfully applied for die attach of these MEMS sensors. Sintering takes place at a very low pressure of 4 N/mm2 and a temperature of 250 °C for 2 min. Furthermore, the attached sensors are tested according to the requirements of deep drilling projects such as geothermal power generation from deep geologic layers. In doing so, the operation of the bonded sensors under realistic conditions for vibration monitoring is analyzed, i.e. simultaneous temperature (250 °C) and vibration (± 50 g) stress.
  • Keywords
    micromechanical devices; piezoresistive devices; silicon-on-insulator; sintering; temperature sensors; vibrations; MEMS sensor; deep geologic layer; deep-drilling monitoring; die attach; geothermal power generation; high-temperature sensor; optimized fabrication process; p-doped double-layer SOI; piezoresistive vibration sensor; silver particle; sintering; temperature 250 C; temperature stress; time 2 min; vibration monitoring; vibration stress; Abstracts; Diamonds; Lead; Neck; Substrates; Vibrations; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4673-1682-8
  • Electronic_ISBN
    978-1-4673-1680-4
  • Type

    conf

  • DOI
    10.1109/ICEPT-HDP.2012.6474912
  • Filename
    6474912