DocumentCode :
3508595
Title :
A study of electrical character of 3D high-density junction capacitor for SiP
Author :
Huijuan Wang ; Daquan Yu ; Ran He ; Liqiang Cao ; Lixi Wan
Author_Institution :
Inst. of Microelectron., Beijing, China
fYear :
2012
fDate :
13-16 Aug. 2012
Firstpage :
1600
Lastpage :
1603
Abstract :
By utilizing the properties of PN junction barrier capacitor, a technology for passive device integration(PDI) on silicon is presented. Accurate high density capacitors, coils, resistors and trough wafer interconnect enable the realization of a highly miniaturized the consumer-oriented connectivity applications module without surface mounted devices (SMDs). The three-dimensional (3D) PN junction structure capacitor increases effective capacitance area, thus enhances capacitance density. With the advantages of high density, low loss, variable capacitance, Electro-Static Discharge (ESD) protection and easy to fabricate, this kind of capacitors can widely take the place of the traditional SMD capacitors and are an excellent candidate for the high-power decoupling, filtering, ESD protection application. Traditional metal-insulator-metal (MIM) capacitor has a major problem that the capacitance will change with the frequency and temperature due to the alterable dielectric constant (e) of the insulator material. It demonstrates that the capacitor can get steady capacitance and low leakage current on the wide range applied bias (V). By etching trench on the surface of the capacitor to form three-dimensional 3D PN junction structure, a high-performance PN junction capacitor based on silicon is achieved in terms of a capacitance density. The electrical characters of the capacitors related to the areas and structures. The capacitors have a high reverse breakdown voltage and a very low reverse leakage current.
Keywords :
MIS capacitors; capacitance; coils; electrostatic discharge; integrated circuit interconnections; leakage currents; p-n junctions; permittivity; resistors; semiconductor device breakdown; surface mount technology; system-in-package; 3D high-density junction capacitor; PDI; PN junction barrier capacitor; SMD capacitors; SiP; capacitance density; coils; consumer-oriented connectivity applications module; electro-static discharge protection; high density capacitors; high-power decoupling; high-power filtering; passive device integration; resistors; silicon; surface mounted devices; three-dimensional PN junction structure capacitor; trough wafer interconnect; variable capacitance; Abstracts; Electromagnetics; Gold; System-on-chip;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4673-1682-8
Electronic_ISBN :
978-1-4673-1680-4
Type :
conf
DOI :
10.1109/ICEPT-HDP.2012.6474913
Filename :
6474913
Link To Document :
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