Title :
Simulation, modeling, and experimental studies of high-gain gallium arsenide photoconductive switches for ultra-wideband applications
Author :
Schamiloglu, E. ; Islam, N.E. ; Fleddermann, C.B. ; Shipley, B. ; Joshi, R.P. ; Zheng, L.
Author_Institution :
Dept. of Electr. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
Abstract :
This paper describes recent results to better understand the physics of operation of high-gain photoconductive semiconductor switches (PCSSs). Computer simulation is a viable tool in the study of the physics of device operation. Such a study of the PCSS will lead to a better understanding of the device mechanisms and may result in the diagnosis of problems and design of a better switch for ultra-wideband high power microwave (HPM) applications. We describe simulation results for a semi-insulating GaAs PCSS switch for testing ultra-wideband (UWB) radiation sources
Keywords :
III-V semiconductors; gallium arsenide; photoconducting switches; power semiconductor switches; semiconductor device models; GaAs; computer simulation; photoconductive switch; semi-insulating gallium arsenide; ultra-wideband high power microwave source; Computational modeling; Computer simulation; Gallium arsenide; III-V semiconductor materials; Microwave devices; Photoconducting devices; Physics; Power semiconductor switches; Testing; Ultra wideband technology;
Conference_Titel :
Ultra-Wideband Short-Pulse Electromagnetics 4, 1998
Conference_Location :
Tel-Aviv
Print_ISBN :
0-306-46206-0
DOI :
10.1109/UWBSP.1998.818956
