A monolithically integrated confocal laser and detector

Author

Matsuda, Osnmu ; Doi, M. ; Narui, H. ; Sahara, K. ; Nakao, Tomoki

Author_Institution

Res. Center, Sony Corp., Yokohama, Japan

fYear

1998

fDate

3-8 May 1998

Firstpage

57

Lastpage

58

Abstract

Summary form only given. The structure of the device is schematically shown. It is grown on a GaAs substrate using conventional MOCVD and is composed of three discrete optical components: a stripe geometry 780-nm AlGaAs laser diode with RIE etched facets, a micro-mirror (3 /spl mu/m in size) whose surface is formed by a grown facet of (111) GaAs, and a set of p-n photodiodes located near the emission facet of the laser.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; micromechanical devices; mirrors; photodetectors; photodiodes; semiconductor lasers; (111) GaAs; 3 mum; 780 nm; AlGaAs; GaAs substrate; RIE etched facets; conventional MOCVD; discrete optical components; emission facet; micro-mirror; monolithically integrated confocal laser; p-n photodiodes; photodetectors; stripe geometry 780-nm AlGaAs laser diode; Bragg gratings; Capacitive sensors; Detectors; Intelligent sensors; Monitoring; Optical fiber sensors; Optical sensors; Photoconductivity; Photodetectors; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.675863

Filename

675863