Title :
Interfacial characterization and reliability issues of high-k gate dielectrics on GaAs substrate for MOSFET applications
Author :
Das, P.S. ; Biswas, Abhijit
Author_Institution :
Dept. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
Abstract :
In this paper GaAs MOS capacitors were fabricated with three advanced gate dielectrics such as Y2O3, HfYO3 and HfAlOx using radio frequency (RF) sputtering unit. Some samples were constructed using a Si interlayer in between the GaAs substrate and the high-k dielectric. Capacitance-voltage and current-voltage measurements were conducted for samples with and without a Si interlayer. Variation of leakage current density and shift in flat band voltage were studied with stress time subjected to a constant voltage stress. Further breakdown properties in terms of time to break down were investigated for all the samples. The improved interface properties, electrical and breakdown characteristics were observed for samples with a Si interlayer.
Keywords :
MOS capacitors; MOSFET; electric breakdown; gallium arsenide; high-k dielectric thin films; leakage currents; reliability; sputter deposition; GaAs; MOSFET application; Si interlayer; breakdown characteristics; capacitance-voltage measurement; capacitor; constant voltage stress; current-voltage measurement; flat band voltage; high-k gate dielectrics; interfacial characterization; leakage current density; radio frequency sputtering unit; reliability; Capacitance; Capacitors; Electric breakdown; Gallium arsenide; Open systems; Reliability; Silicon; GaAs MOS capacitors; electrical characterization; high-k gate dielectrics; reliability properties;
Conference_Titel :
Informatics, Electronics & Vision (ICIEV), 2012 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-1153-3
DOI :
10.1109/ICIEV.2012.6317396
