Title :
Processing conditions for polysilicon films with tensile strain for large aspect ratio microstructures
Author :
Guckel, H. ; Burns, D.W. ; Tilmans, H.A.C. ; Visser, C.C.G. ; DeRoo, D.W. ; Christenson, T.R. ; Klomberg, P.J. ; Sniegowski, J.J. ; Jones, D.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
The processing conditions to obtain high-quality and repeatable polysilicon films are described. These include substrate preparation, the deposition procedure, reactor configuration, and postdeposition treatment. Examples of large-aspect-ratio microstructures such as long, thin beams and tuning forms for sensor applications and large-area diaphragms for piezoresistive microphones and X-ray masks are presented to illustrate the potential of polysilicon films that are in tension.<>
Keywords :
X-ray lithography; chemical vapour deposition; electric sensing devices; elemental semiconductors; masks; microphones; piezoelectric devices; semiconductor technology; semiconductor thin films; silicon; LPCVD; X-ray masks; deposition; large aspect ratio microstructures; large-area diaphragms; piezoresistive microphones; postdeposition treatment; reactor configuration; semiconductors; substrate preparation; tensile strain; tuning; tuning fork; Capacitive sensors; Crystalline materials; Mechanical factors; Microstructure; Semiconductor films; Silicon; Substrates; Surface contamination; Surface morphology; Tensile strain;
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
DOI :
10.1109/SOLSEN.1988.26431
