Title :
Analysis and compact modeling of lateral DMOS power devices under ESD stress conditions
Author :
Mergens, Markus ; Wilkening, Wolfgang ; Mettler, Stephan ; Wolf, Heinrich ; Stricker, Andreas ; Fichtner, Wolfgang
Author_Institution :
Robert Bosch GmbH, Reutlingen, Germany
Abstract :
The detailed physical mechanisms specific to 40 V LDMOS power transistors under ESD stress (gate grounded/coupled) are investigated by means of TLP measurements/HBM testing, electron emission microscopy (EMMI) measurements, and 2D device simulations. Inhomogeneous triggering caused by device topology as well as the sustained nonhomogenous current flow due to the unusual electrical behaviour are analyzed in single- and multifinger devices. An existing ESD-MOS compact model is extended according to the investigated phenomena. It successfully describes LDMOS high current behaviour.
Keywords :
electric current; electron microscopy; electrostatic discharge; power MOSFET; semiconductor device models; semiconductor device testing; 2D device simulations; 40 V; EMMI measurements; ESD stress conditions; ESD-MOS compact model; HBM testing; LDMOS high current behaviour; LDMOS power transistors; TLP measurements; compact modeling; device topology; electrical behaviour; electron emission microscopy; gate grounded/coupled ESD stress; inhomogeneous triggering; lateral DMOS power devices; multifinger devices; single-finger devices; sustained nonhomogenous current flow; Breakdown voltage; Contact resistance; Electrical resistance measurement; Electrostatic discharge; Low voltage; Power measurement; Power transistors; Protection; Stress measurement; System testing;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1999
Conference_Location :
Orlando, FL, USA
Print_ISBN :
1-58637-007-X
DOI :
10.1109/EOSESD.1999.818983
