• DocumentCode
    3509186
  • Title

    The effect of switching frequency, duty ratio, and dead times on a synchronous boost rectifier for low power electromagnetic energy harvesters

  • Author

    Proynov, P.P. ; Szarka, G.D. ; Stark, B.H. ; McNeill, N.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. of Bristol, Bristol, UK
  • fYear
    2012
  • fDate
    5-9 Feb. 2012
  • Firstpage
    667
  • Lastpage
    674
  • Abstract
    Electromagnetic vibrational energy harvesters require rectification and boosting of their ac output voltage. This paper presents a single-stage, full-wave, synchronous boost rectifier circuit in an H-bridge configuration, and explores the dependence of both conversion efficiency and harvester utilisation on the precise switching patterns of the two `active diodes´ and two `switching devices´. Switching instants are controlled via the following parameters: switching frequency, duty ratio, and dead times. Experimental results are presented that quantify the dependence of the output power and converter efficiency on these control parameters. Conversion efficiency up to 92% is achieved at 700 μW levels with externally powered gate drive circuit. The full-wave boost rectifier is capable of extracting up to 95% of the maximum available power from the harvester, when the switching parameters are set to provide optimised resistive apparent input impedance.
  • Keywords
    bridge circuits; electromagnetic waves; energy harvesting; rectifying circuits; switching convertors; AC output voltage boosting; AC output voltage rectification; H-bridge configuration; active diode; control parameters; conversion efficiency; converter efficiency; dead times; duty ratio; harvester utilisation; low power electromagnetic vibrational energy harvester; single-stage full-wave synchronous boost rectifier circuit; switching device; switching frequency; switching instants control; switching patterns; synchronous boost rectifier; Electromagnetics; Logic gates; Rectifiers; Switches; Switching circuits; Switching frequency; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4577-1215-9
  • Electronic_ISBN
    978-1-4577-1214-2
  • Type

    conf

  • DOI
    10.1109/APEC.2012.6165890
  • Filename
    6165890