• DocumentCode
    3509200
  • Title

    Plasma-charging damage and ESD, help each other?

  • Author

    Cheung, Kin P.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1999
  • fDate
    28-30 Sept. 1999
  • Firstpage
    38
  • Lastpage
    42
  • Abstract
    ESD and plasma-charging damage are different modes of electrical stress that degrade integrated circuits. They are quite different and yet share many similarities. As integrated circuit technology continues to progress, the challenge of how to protect the ultra-thin gate-oxide from both of these phenomena is faced. This paper discusses the common problem shared by both communities.
  • Keywords
    dielectric thin films; electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit technology; plasma materials processing; protection; surface charging; surface treatment; ESD; IC degradation; electrical stress modes; integrated circuit technology; integrated circuits; plasma-charging damage; ultra-thin gate-oxide protection; Circuits; Degradation; Diodes; Electrostatic discharge; MOS devices; Plasma density; Plasma devices; Protection; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1999
  • Conference_Location
    Orlando, FL, USA
  • Print_ISBN
    1-58637-007-X
  • Type

    conf

  • DOI
    10.1109/EOSESD.1999.818987
  • Filename
    818987
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3509200