DocumentCode
3509222
Title
A study of ESD induced lockups in a semiconductor photolithography area
Author
Ford-Smith, Roderick ; Barnett, Harold ; Leal, George ; Sutorius, Gary
Author_Institution
Ion Syst., Berkeley, CA, USA
fYear
1999
fDate
28-30 Sept. 1999
Firstpage
43
Lastpage
47
Abstract
ESD events in modern state-of-the-art semiconductor fabs are becoming more noticeable as tool sophistication (i.e. ESD-induced EMI susceptibility) increases. An ongoing study in one such fab points out the effectiveness of a comprehensive ESD program-one that is continually examining itself to ensure proven grounding and ionization techniques are followed.
Keywords
earthing; electromagnetic interference; electrostatic discharge; integrated circuit manufacture; ionisation; photolithography; process monitoring; ESD events; ESD induced lock-ups; ESD program; ESD-induced EMI susceptibility; grounding techniques; ionization techniques; semiconductor fabs; semiconductor photolithography area; tool sophistication; Conducting materials; Electromagnetic interference; Electrostatic discharge; Electrostatic interference; Grounding; Guidelines; Ionization; Lithography; Surface discharges; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1999
Conference_Location
Orlando, FL, USA
Print_ISBN
1-58637-007-X
Type
conf
DOI
10.1109/EOSESD.1999.818988
Filename
818988
Link To Document