DocumentCode
3509273
Title
As-deposited low-strain LPCVD polysilicon
Author
Fan, L.S. ; Muller, R.S.
Author_Institution
Dept. of Electr. Eng., California Univ., Berkeley, CA, USA
fYear
1988
fDate
6-9 June 1988
Firstpage
55
Lastpage
58
Abstract
As-deposited polysilicon films with very low residual strain (lower than 5*10/sup -5/) are obtained by a low-pressure, chemical-vapor-deposition (LPCVD) process. Straight polysilicon bridges 300 mu m long, 1.2 mu m thick, and 2 to 20 mu m wide, have been made using this process. No buckling has been observed in any of the nearly 1000 bridges of this type made in two separate process runs. In addition, no problems of sticking between the bridges and the substrate were encountered with these structures.<>
Keywords
CVD coatings; chemical vapour deposition; elemental semiconductors; internal stresses; semiconductor growth; semiconductor thin films; silicon; 1.2 micron; 2 to 20 micron; 300 micron; LPCVD; Si; Si:P; bridges; buckling; low pressure CVD; polycrystalline Si film; residual strain; semiconductor; sticking; Amorphous materials; Annealing; Bridges; Capacitive sensors; Chemical sensors; Compressive stress; Microstructure; Residual stresses; Temperature distribution; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE
Conference_Location
Hilton Head Island, SC, USA
Type
conf
DOI
10.1109/SOLSEN.1988.26432
Filename
26432
Link To Document