Title :
As-deposited low-strain LPCVD polysilicon
Author :
Fan, L.S. ; Muller, R.S.
Author_Institution :
Dept. of Electr. Eng., California Univ., Berkeley, CA, USA
Abstract :
As-deposited polysilicon films with very low residual strain (lower than 5*10/sup -5/) are obtained by a low-pressure, chemical-vapor-deposition (LPCVD) process. Straight polysilicon bridges 300 mu m long, 1.2 mu m thick, and 2 to 20 mu m wide, have been made using this process. No buckling has been observed in any of the nearly 1000 bridges of this type made in two separate process runs. In addition, no problems of sticking between the bridges and the substrate were encountered with these structures.<>
Keywords :
CVD coatings; chemical vapour deposition; elemental semiconductors; internal stresses; semiconductor growth; semiconductor thin films; silicon; 1.2 micron; 2 to 20 micron; 300 micron; LPCVD; Si; Si:P; bridges; buckling; low pressure CVD; polycrystalline Si film; residual strain; semiconductor; sticking; Amorphous materials; Annealing; Bridges; Capacitive sensors; Chemical sensors; Compressive stress; Microstructure; Residual stresses; Temperature distribution; X-ray diffraction;
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
DOI :
10.1109/SOLSEN.1988.26432
