DocumentCode :
3509528
Title :
Transient latch-up using an improved bi-polar trigger
Author :
Morgan, Ian ; Hatchard, Colin ; Mahanpour, Mehrdad
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
fYear :
1999
fDate :
28-30 Sept. 1999
Firstpage :
190
Lastpage :
202
Abstract :
This paper reports the results of initiating transient latch-up (TLU) using a new improved trigger. The trigger produced by capacitive discharge has a high energy, under-damped bi-polar waveform similar in shape to the machine model (MM) but of lower voltage and frequency. High pin count parts from advanced deep sub-micron technologies were stimulated by combining V/sub cc/ supply pin excitation with dynamic component operation using active vectors at low clock frequency. Weak product that appears extremely robust to an over-damped uni-polar trigger was confirmed to be very susceptible to negative-going, under-damped bi-polar transients. The trigger avoids the risk of MM electrostatic discharge (ESD) damage; but combines elements of voltage over-stress, current injection, and slew rate into one stress application. The low resonant frequency facilitates straightforward integration into very high pin count testers.
Keywords :
electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit testing; transient analysis; MM ESD damage; active vectors; bi-polar trigger; capacitive discharge; clock frequency; component pin count; current injection; dynamic component operation; electrostatic discharge; high pin count tester integration; machine model shape; over-damped uni-polar trigger; resonant frequency; slew rate; stress application; supply pin excitation; transient latch-up initiation; under-damped bi-polar transients; under-damped bi-polar waveform; voltage over-stress; waveform frequency; waveform voltage; Clocks; Earth Observing System; Electrostatic discharge; Instruments; Pins; Resonant frequency; Robustness; Shape; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1999
Conference_Location :
Orlando, FL, USA
Print_ISBN :
1-58637-007-X
Type :
conf
DOI :
10.1109/EOSESD.1999.819005
Filename :
819005
Link To Document :
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