Title :
Reliability of IGBT in a STATCOM for harmonic compensation and power factor correction
Author :
Reddy, Lakshmi Gopi ; Tolbert, Leon M. ; Ozpineci, Burak ; Xu, Yan ; Rizy, D. Tom
Author_Institution :
Dept. of Electr. Eng. & Comp. Sci., Univ. of Tennessee, Knoxville, TN, USA
Abstract :
With smart grid integration, there is a need to characterize reliability of a power system by including reliability of power semiconductors in grid related applications. In this paper, the reliability of IGBTs in a STATCOM application is presented for two different applications, power factor correction and harmonic elimination. The STATCOM model is developed in EMTP, and analytical equations for average conduction losses in an IGBT and a diode are derived and compared with experimental data. A commonly used reliability model is used to predict reliability of IGBT.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power factor correction; power semiconductor devices; power system reliability; semiconductor device reliability; smart power grids; static VAr compensators; IGBT; STATCOM; harmonic compensation; power factor correction; power semiconductors reliability; power system reliability; smart grid integration; Harmonic analysis; Insulated gate bipolar transistors; Inverters; Power system harmonics; Power system reliability; Reliability; Temperature;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1215-9
Electronic_ISBN :
978-1-4577-1214-2
DOI :
10.1109/APEC.2012.6165908
