Title :
Insulation protection of high-power GaAs photoconductive switch
Author :
Wei, Shi ; Zhenxian, Liang ; Jun, Feng ; Chuanxiang, Xu
Author_Institution :
Inst. of Electr. Insulation, Xi´´an Jiaotong Univ., China
Abstract :
An all-solid insulation technique for surface protection of high-voltage lateral GaAs photoconductive switch has been reported in this paper. Multilayer transparent dielectrics as passivation and insulation protection materials are deposited and coated on the surface of the GaAs switch. Optimal geometry of the planar ohmic contacts was calculated. The ideal dark I-V characteristics of fabricated devices was observed. The hold-off field strength reaches 35 kv/cm
Keywords :
III-V semiconductors; characteristics measurement; dielectric thin films; gallium arsenide; ohmic contacts; passivation; photoconducting switches; protective coatings; GaAs; all-solid insulation technique; dark I-V characteristic; high-voltage lateral photoconductive switch; hold-off field strength; insulation protection materials; multilayer transparent dielectrics; passivation; planar ohmic contacts; surface protection; Dielectric materials; Dielectrics and electrical insulation; Gallium arsenide; Geometry; Nonhomogeneous media; Passivation; Photoconducting materials; Photoconductivity; Protection; Switches;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.616591
