Title :
Submilliwatt, short-pulse, terahertz radiation from femtosecond-laser irradiated InAs in a magnetic field
Author :
Sarukura, N. ; Ohtake, H. ; Izumida, S. ; Zhenlin Liu ; Ono, S. ; Yamanaka, T.
Author_Institution :
Inst. for Molecular Sci., Okazaki, Japan
Abstract :
Summary form only given. We have demonstrated a new, simple, and intense terahertz-radiation source just using bulk InAs. An average power of 650 /spl mu/W was achieved in a 1.7-T magnetic field with 1.5-W excitation power. A dramatic change of ellipticity was also observed for different magnetic fields.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; laser beam effects; magneto-optical effects; microwave generation; 1.5 W; 1.7 T; 650 muW; InAs; average power; bulk InAs semiconductor; dramatic change; ellipticity; excitation power; femtosecond-laser irradiated InAs; intense terahertz-radiation source; magnetic field; magnetic fields; submilliwatt short-pulse terahertz radiation; Antenna measurements; Electrons; Laser excitation; Magnetic field measurement; Magnetic fields; Optical sensors; Power lasers; Submillimeter wave measurements; Surface emitting lasers; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.675869
