Title :
Synaptic SONOS nonvolatile analog memories for artifical neural networks
Author :
Lee, Sung-Bae ; Kim, Seon-Ju ; Yi, Sang-Bae ; Seo, Kwang-Yell
Author_Institution :
Dept. of Electron. Mater., Kwangwoon Univ., Seoul, South Korea
Abstract :
In this paper, a new synapse cell with nonvolatile SONOS semiconductor memory device is proposed. The memory value, synaptic weights, can be changed incrementally. A novel SONOS synapse is used to read out the stored value. For the purpose of synapse implementation using SONOS NVSM, this work has investigated weight updating characteristics including multiplying characteristics. It is concluded that SONOS synapse cell has excellent characteristics for use as a synapse in artificial neural networks
Keywords :
analogue storage; neural nets; semiconductor storage; semiconductor-insulator-semiconductor devices; analog memory; artifical neural network; nonvolatile SONOS semiconductor memory; synapse cell; Artificial neural networks; Charge coupled devices; Low voltage; MOSFET circuits; Nonvolatile memory; SONOS devices; Semiconductor memory; Threshold voltage; Tunneling; Writing;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.616593
