DocumentCode
3510122
Title
ESD damage of GMR sensors at head stack assembly
Author
Zeng, Robin ; Qun, Yu ; Zhao, Fenggang ; Tian, Hong
Author_Institution
SAE Magnetics (HK) Ltd., Dongguan City, China
fYear
1999
fDate
28-30 Sept. 1999
Firstpage
380
Lastpage
384
Abstract
Magnetic performance degradation of giant magnetoresistive (GMR) sensors in magnetic recording heads often occurs after ESD exposure. This ESD damage phenomenon is not just limited to slider fabrication and head gimbal assembly (HGA) levels. It also can happen at head stack assembly (HSA) level. This study investigates ESD damage phenomena at HSA level under four types of experiments: tribo-charging from insulating parts of the HSA, EMI from external sources, direct charge, and the AC field around the HSA. The results indicate that the design and the connection of the flex printed circuit (FPC) has a significant impact on ESD protection for both HSA manufacturing and disk drive manufacturing.
Keywords
electric connectors; electromagnetic interference; electronic equipment manufacture; electrostatic discharge; giant magnetoresistance; magnetic heads; magnetoresistive devices; printed circuit accessories; printed circuit design; sensitivity; static electrification; triboelectricity; AC field; ESD damage; ESD damage phenomena; ESD damage phenomenon; ESD exposure; ESD protection; GMR sensors; HSA manufacturing; direct charge; disk drive manufacturing; external source EMI; flex printed circuit; giant magnetoresistive sensors; head gimbal assembly; head stack assembly; head stack assembly level ESD damage; insulating parts; magnetic performance degradation; magnetic recording heads; printed circuit connection; printed circuit design; slider fabrication; tribo-charging; Assembly; Degradation; Electrostatic discharge; Flexible printed circuits; Giant magnetoresistance; Magnetic heads; Magnetic recording; Magnetic sensors; Manufacturing; Sensor phenomena and characterization;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1999
Conference_Location
Orlando, FL, USA
Print_ISBN
1-58637-007-X
Type
conf
DOI
10.1109/EOSESD.1999.819087
Filename
819087
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