Fracture strain of LPCVD polysilicon

Author

Tai, Y.C ; Muller, R.S.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1988

fDate

6-9 June 1988

Firstpage

88

Lastpage

91

Abstract

A polysilicon bridge-slider structure in which one end of the bridge is fixed and the other is connected to a plate sliding in two flanged guideways, is designed and fabricated to study the strain at fracture of LPCVD polysilicon. In the experiments, a mechanical probe is used to push against the plate end, compressing and forcing the bridge to buckle until it breaks. The distance that the plate needs to be pushed to break the bridge is recorded. Nonlinear beam theory is then used to interpret the results of these axially-loaded-bridge experiments. The measured average fracture strain of as-deposited LPCVD polysilicon is 1.72%. High-temperature annealing of the bridge-sliders at 1000 degrees C for 1 h decreases the average fracture strain to 0.93%.<>

Keywords

CVD coatings; elemental semiconductors; fracture toughness testing; silicon; strain measurement; 1 hour; 1000 degC; average fracture strain; axially-loaded-bridge; bridge-slider structure; buckling; flanged guideways; high-temperature annealing; low pressure CVD; mechanical probe; nonlinear beam theory; plate end; polycrystalline Si; semiconductor; Actuators; Annealing; Bridges; Capacitive sensors; Flanges; Gears; Laboratories; Probes; Silicon; Strain measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE

Conference_Location

Hilton Head Island, SC, USA

Type

conf

DOI

10.1109/SOLSEN.1988.26440

Filename

26440