DocumentCode :
3510216
Title :
Fracture strain of LPCVD polysilicon
Author :
Tai, Y.C ; Muller, R.S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear :
1988
fDate :
6-9 June 1988
Firstpage :
88
Lastpage :
91
Abstract :
A polysilicon bridge-slider structure in which one end of the bridge is fixed and the other is connected to a plate sliding in two flanged guideways, is designed and fabricated to study the strain at fracture of LPCVD polysilicon. In the experiments, a mechanical probe is used to push against the plate end, compressing and forcing the bridge to buckle until it breaks. The distance that the plate needs to be pushed to break the bridge is recorded. Nonlinear beam theory is then used to interpret the results of these axially-loaded-bridge experiments. The measured average fracture strain of as-deposited LPCVD polysilicon is 1.72%. High-temperature annealing of the bridge-sliders at 1000 degrees C for 1 h decreases the average fracture strain to 0.93%.<>
Keywords :
CVD coatings; elemental semiconductors; fracture toughness testing; silicon; strain measurement; 1 hour; 1000 degC; average fracture strain; axially-loaded-bridge; bridge-slider structure; buckling; flanged guideways; high-temperature annealing; low pressure CVD; mechanical probe; nonlinear beam theory; plate end; polycrystalline Si; semiconductor; Actuators; Annealing; Bridges; Capacitive sensors; Flanges; Gears; Laboratories; Probes; Silicon; Strain measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
Type :
conf
DOI :
10.1109/SOLSEN.1988.26440
Filename :
26440
Link To Document :
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