Characterization of the mechanisms producing bending moments in polysilicon micro-cantilever beams by interferometric deflection measurements

Author

Lober, T.A. ; Huang, J. ; Schmidt, M.A. ; Senturia, S.D.

Author_Institution

Microsyst. Technol. Lab., MIT, Cambridge, MA, USA

fYear

1988

fDate

6-9 June 1988

Firstpage

92

Lastpage

95

Abstract

Polysilicon micro-cantilever beams and doubly-supported beams are fabricated and conditioned with phosphorus doping and high-temperature anneal cycles to assess the effects of process history and geometry on polysilicon microstructure rigidity. Using a Linnik interferometer, deflection trends for series of beams are measured and compared for several process conditions. Two bending moments can induce beam deflection: the first due to the beam boundary support, and the second due to stress nonuniformity through the beam thickness. A comparison of polysilicon microstructure deflection behavior for doping and annealing conditions is presented and discussed.<>

Keywords

annealing; bending strength; elemental semiconductors; light interferometry; mechanical testing; silicon; Linnik interferometer; Si:P; beam boundary support; beam deflection; bending moments; doping; doubly-supported beams; high-temperature anneal cycles; interferometric deflection measurements; micro-cantilever beams; microstructure; polycrystalline Si; stress nonuniformity; Annealing; Chemicals; Doping; Geometry; History; Microstructure; Optical interferometry; Silicon; Strain measurement; Structural beams;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE

Conference_Location

Hilton Head Island, SC, USA

Type

conf

DOI

10.1109/SOLSEN.1988.26441

Filename

26441