Title :
Characterization of the mechanisms producing bending moments in polysilicon micro-cantilever beams by interferometric deflection measurements
Author :
Lober, T.A. ; Huang, J. ; Schmidt, M.A. ; Senturia, S.D.
Author_Institution :
Microsyst. Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
Polysilicon micro-cantilever beams and doubly-supported beams are fabricated and conditioned with phosphorus doping and high-temperature anneal cycles to assess the effects of process history and geometry on polysilicon microstructure rigidity. Using a Linnik interferometer, deflection trends for series of beams are measured and compared for several process conditions. Two bending moments can induce beam deflection: the first due to the beam boundary support, and the second due to stress nonuniformity through the beam thickness. A comparison of polysilicon microstructure deflection behavior for doping and annealing conditions is presented and discussed.<>
Keywords :
annealing; bending strength; elemental semiconductors; light interferometry; mechanical testing; silicon; Linnik interferometer; Si:P; beam boundary support; beam deflection; bending moments; doping; doubly-supported beams; high-temperature anneal cycles; interferometric deflection measurements; micro-cantilever beams; microstructure; polycrystalline Si; stress nonuniformity; Annealing; Chemicals; Doping; Geometry; History; Microstructure; Optical interferometry; Silicon; Strain measurement; Structural beams;
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
DOI :
10.1109/SOLSEN.1988.26441
