Mechanical properties of fine grained polysilicon-the repeatability issue

Author

Guckel, H. ; Burns, D.W. ; Tilmans, H.A.C. ; DeRoo, D.W. ; Rutigliano, C.R.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

fYear

1988

fDate

6-9 June 1988

Firstpage

96

Lastpage

99

Abstract

Calculation and measurements of Young´s modulus, Poisson´s ratio, shear modulus, and internal strain for fine-grained polysilicon as a function of processing conditions are presented. Calculations are based on appropriate averaging of single-crystal silicon properties, taking into account the film morphology. Experimental data are taken from strain diagnostic and resonant beam structures. It is found that polysilicon films can be in tension and that the intrinsic quality factor is approaching 75000.<>

Keywords

Poisson ratio; Young´s modulus; crystal morphology; elastic moduli measurement; elemental semiconductors; internal stresses; mechanical testing; semiconductor thin films; shear modulus; silicon; Poisson´s ratio; Si; Young´s modulus; averaging; film morphology; fine grained polysilicon; internal strain; intrinsic quality factor; resonant beam structures; semiconductor; shear modulus; strain diagnostic; tension; Capacitive sensors; Crystal microstructure; Crystalline materials; Grain boundaries; Mechanical factors; Morphology; Semiconductor films; Silicon; Structural beams; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE

Conference_Location

Hilton Head Island, SC, USA

Type

conf

DOI

10.1109/SOLSEN.1988.26442

Filename

26442