Reoxidized nitrided oxides as gate dielectrics for high temperature integrated sensor MOS devices

Author

Shiau, W.-T. ; Terry, F.L., Jr.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1988

fDate

6-9 June 1988

Firstpage

100

Lastpage

101

Abstract

It is shown that reoxidized nitrided oxides can offer both increased resistance to generation of interface states and insulator charge buildup due to bias-temperature stress for gate fields from 1-4 MV/cm and temperatures from 100-300 degrees C. Preliminary indications show that nitrided oxides may offer increased resistance to accelerated destructive breakdown at high temperature. The processing time and temperature conditions used as clearly not desirable for VLSI MOSFET processes. They do, however, demonstrate substantial promise for development of a high-temperature gate insulator process.<>

Keywords

VLSI; electric breakdown of solids; electric sensing devices; field effect integrated circuits; insulated gate field effect transistors; oxidation; semiconductor technology; silicon compounds; 100 to 300 degC; SiO/sub 2/-Si/sub 3/N/sub 4/; VLSI MOSFET; bias-temperature stress; gate dielectrics; generation of interface states; high temperature integrated sensor MOS devices; high-temperature gate insulator process; insulator charge buildup; reoxidized nitrided oxides; resistance to accelerated destructive breakdown; Artificial intelligence; Dielectric devices; Dielectrics and electrical insulation; Electric resistance; Interface states; Ionizing radiation; MOS capacitors; MOS devices; Nuclear power generation; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE

Conference_Location

Hilton Head Island, SC, USA

Type

conf

DOI

10.1109/SOLSEN.1988.26445

Filename

26445