Noise correlations in magnetic field sensitive transistors

Author

Baltes, H.P. ; Nathan, A. ; Briglio, D.R.

Author_Institution

Dept. of Electr. Eng., Alberta Univ., Edmonton, Alta., Canada

fYear

1988

fDate

6-9 June 1988

Firstpage

104

Lastpage

105

Abstract

Measurements are presented of noise voltage power spectral density (PSD) on various dual collector magnetotransistors (MTs) fabricated in CMOS and bipolar technologies which are sensitive to magnetic fields parallel to the chip surface. The PSD of the differential signal is at least 100 times smaller than the single-ended counterpart. The correlation coefficient is approximately unity and seems to be independent of the fabrication process. In dual-drain MAGFETs, the noise voltage PSD is about four times as large as that of the single-ended output. A strong negative correlation in drain noise voltages is observed.<>

Keywords

bipolar integrated circuits; electric noise measurement; electric sensing devices; electron device noise; field effect integrated circuits; magnetic field measurement; CMOS; bipolar technologies; differential signal; drain noise voltages; dual collector magnetotransistors; dual drain MAGFET; electric sensing device; magnetic field sensitive transistors; noise correlation; noise voltage power spectral density; CMOS technology; Density measurement; Fabrication; Magnetic field measurement; Magnetic fields; Magnetic noise; Noise measurement; Power measurement; Semiconductor device measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE

Conference_Location

Hilton Head Island, SC, USA

Type

conf

DOI

10.1109/SOLSEN.1988.26447

Filename

26447