Title :
Noise correlations in magnetic field sensitive transistors
Author :
Baltes, H.P. ; Nathan, A. ; Briglio, D.R.
Author_Institution :
Dept. of Electr. Eng., Alberta Univ., Edmonton, Alta., Canada
Abstract :
Measurements are presented of noise voltage power spectral density (PSD) on various dual collector magnetotransistors (MTs) fabricated in CMOS and bipolar technologies which are sensitive to magnetic fields parallel to the chip surface. The PSD of the differential signal is at least 100 times smaller than the single-ended counterpart. The correlation coefficient is approximately unity and seems to be independent of the fabrication process. In dual-drain MAGFETs, the noise voltage PSD is about four times as large as that of the single-ended output. A strong negative correlation in drain noise voltages is observed.<>
Keywords :
bipolar integrated circuits; electric noise measurement; electric sensing devices; electron device noise; field effect integrated circuits; magnetic field measurement; CMOS; bipolar technologies; differential signal; drain noise voltages; dual collector magnetotransistors; dual drain MAGFET; electric sensing device; magnetic field sensitive transistors; noise correlation; noise voltage power spectral density; CMOS technology; Density measurement; Fabrication; Magnetic field measurement; Magnetic fields; Magnetic noise; Noise measurement; Power measurement; Semiconductor device measurement; Voltage;
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
DOI :
10.1109/SOLSEN.1988.26447
