DocumentCode :
3510446
Title :
Microwave analysis of a MEMS switch
Author :
Asaduzzaman, Md ; Rahman, Md Shoaibur
Author_Institution :
Dept. Electr. Eng. & Electron. Eng., Ahsanullah Univ. of Sci. & Technol., Dhaka, Bangladesh
fYear :
2012
fDate :
18-19 May 2012
Firstpage :
1050
Lastpage :
1053
Abstract :
This paper demonstrates Radio Frequency (RF) performances of a proposed and designed two hot arms actuator MEMS switch. The switch is designed and simulated using CST Microwave Studio. AWR Microwave Office has been used to obtain different parameters of transmission line. The simulated results show that the designed MEMS switch performs well at high frequency. At OFF state the return loss S11 drops nearly to zero dB and the isolation S21 become lower than -50 dB at 1 GHz and -35 dB at 10 GHz which indicates the high isolation. At ON state position the simulation exhibits very low insertion loss, S21 <; -0.16 dB at 10 GHz and return loss S11 <;-19 dB at 10 GHz. Even at more high frequency insertion loss is very low as S21 <; -0.22 dB and return loss S11 <; -18 dB at 39.5 GHz.
Keywords :
microactuators; microswitches; AWR Microwave Office; CST Microwave Studio; MEMS switch; OFF state; frequency 10 GHz; frequency 39.5 GHz; hot arms actuator; insertion loss; microwave analysis; radio frequency performances; return loss; transmission line; Mechanical factors; Micromechanical devices; Microwave FET integrated circuits; Microwave integrated circuits; Radio frequency; Reliability; Switches; Actuators; Insertion loss; Isolation; MEMS; RF;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Informatics, Electronics & Vision (ICIEV), 2012 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-1153-3
Type :
conf
DOI :
10.1109/ICIEV.2012.6317475
Filename :
6317475
Link To Document :
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