Analytical model of spatial distribution of potential along the channel of low band gap GNR-FET at high temperature

In this paper, an analytical model is developed for potential along the channel of low band gap graphene nanoribbon field effect transistor (GNR-FET) at high temperature. For the derivation of equation of potential, non-locality approximation of poisson´s equation has been used. The spatial variation of potential along the channel has been investigated with the variation of top gate voltage, drain voltage, top gate length and temperature. Since graphene nanoribbon with higher width has very narrow band-gap, due to inverse relationship between ribbon width and band-gap, this analytical model would be applicable for GNR with larger width.