Title :
Plasma doping and subsequent rapid thermal processing for ultra shallow junction formation
Author :
Mizuno, Bunji ; Sasaki, Yuichiro ; Jin, Cheun-Guo ; Tamura, Hideki ; Okashita, Katsumi ; Sauddin, Hendriansyah ; Ito, Hiroyuki ; Tsutsui, Kazuo ; Iwai, Hiroshi
Author_Institution :
Ultimate Junction Technol. Inc., Osaka
Abstract :
Authors summarize and update the status of plasma doping (PD) using He plasma amorphous (PA) technology and spectroscopic ellipsometry (SE). Authors also recommend PD as the best alternative method for ultra shallow junction formation at the 45 nm technology node and beyond. The latest annealing methods of laser annealing (LA) and flash lamp annealing (FLA) were combined with PD. Conventional spike RTA was also used to achieve adequate junction depth with lower resistance
Keywords :
ellipsometry; incoherent light annealing; laser beam annealing; plasma materials processing; rapid thermal annealing; semiconductor doping; semiconductor junctions; 45 nm technology node; He plasma amorphous technology; flash lamp annealing; laser annealing; plasma doping; rapid thermal processing; spectroscopic ellipsometry; ultra shallow junction; Annealing; CMOS technology; Doping; Helium; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Plasma temperature; Rapid thermal processing; Very large scale integration;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2005. RTP 2005. 13th IEEE International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9223-X
DOI :
10.1109/RTP.2005.1613683
