Title :
Manufacturability comparison of thin oxynitride films
Author :
Preuss, H. ; Nakos, J. ; Adams, E. ; Burnham, J.
Author_Institution :
IBM Syst. & Technol. Group, Essex Junction, VT
Abstract :
Thin film nitridation has many applications in sub-0.13-micron line width semiconductor processing. We evaluated several single-wafer processing options capable of creating oxynitride films. Analytical results were obtained using ellipsometry, X-ray photoelectron spectroscopy (XPS), and TOFSIMS. These control methods are also compared to electrical performance data. Data are also reviewed with respect to manufacturing requirements such as tool-to-tool matching and process capability; including chamber to chamber, wafer to wafer and within wafer variability
Keywords :
X-ray photoelectron spectra; dielectric thin films; ellipsometry; nitridation; plasma materials processing; semiconductor technology; time of flight mass spectra; 200 mm; 200-mm single-wafer processing; TOFSIMS; X-ray photoelectron spectroscopy; decoupled plasma nitridation; ellipsometry; remote plasma nitridation; sub-0.13-micron line width semiconductor processing; thermal nitridation; thin film nitridation; thin oxynitride film manufacturability; time-of-flight secondary ion mass spectroscopy; Condition monitoring; Manufacturing processes; Nitrogen; Performance analysis; Plasma materials processing; Plasma x-ray sources; Semiconductor device manufacture; Semiconductor films; Spectroscopy; Temperature;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2005. RTP 2005. 13th IEEE International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9223-X
DOI :
10.1109/RTP.2005.1613694
