Manufacturability comparison of thin oxynitride films

Author

Preuss, H. ; Nakos, J. ; Adams, E. ; Burnham, J.

Author_Institution

IBM Syst. & Technol. Group, Essex Junction, VT

fYear

2005

fDate

4-7 Oct. 2005

Abstract

Thin film nitridation has many applications in sub-0.13-micron line width semiconductor processing. We evaluated several single-wafer processing options capable of creating oxynitride films. Analytical results were obtained using ellipsometry, X-ray photoelectron spectroscopy (XPS), and TOFSIMS. These control methods are also compared to electrical performance data. Data are also reviewed with respect to manufacturing requirements such as tool-to-tool matching and process capability; including chamber to chamber, wafer to wafer and within wafer variability

Keywords

X-ray photoelectron spectra; dielectric thin films; ellipsometry; nitridation; plasma materials processing; semiconductor technology; time of flight mass spectra; 200 mm; 200-mm single-wafer processing; TOFSIMS; X-ray photoelectron spectroscopy; decoupled plasma nitridation; ellipsometry; remote plasma nitridation; sub-0.13-micron line width semiconductor processing; thermal nitridation; thin film nitridation; thin oxynitride film manufacturability; time-of-flight secondary ion mass spectroscopy; Condition monitoring; Manufacturing processes; Nitrogen; Performance analysis; Plasma materials processing; Plasma x-ray sources; Semiconductor device manufacture; Semiconductor films; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2005. RTP 2005. 13th IEEE International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9223-X

Type

conf

DOI

10.1109/RTP.2005.1613694

Filename

1613694