Title :
An all-epitaxiai vertical-cavity bistable device at 1.55 /spl mu/m
Author :
Debray, J-P. ; Lugagne-Delpon, E. ; Le Roux, G. ; Quillec, M.
Author_Institution :
France Telecom/CNET/
Keywords :
Capacitance-voltage characteristics; Dark current; Etching; Gallium arsenide; Indium compounds; Indium phosphide; Mirrors; PIN photodiodes; Reflectivity; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4125-2
DOI :
10.1109/CLEO.1997.603417
