DocumentCode

3511506

Title

An all-epitaxiai vertical-cavity bistable device at 1.55 /spl mu/m

Author

Debray, J-P. ; Lugagne-Delpon, E. ; Le Roux, G. ; Quillec, M.

Author_Institution

France Telecom/CNET/

Volume

11

fYear

1997

fDate

18-23 May 1997

Firstpage

449

Lastpage

450

Keywords

Capacitance-voltage characteristics; Dark current; Etching; Gallium arsenide; Indium compounds; Indium phosphide; Mirrors; PIN photodiodes; Reflectivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

0-7803-4125-2

Type

conf

DOI

10.1109/CLEO.1997.603417

Filename

603417