Title :
SiON gate dielectric formation by rapid thermal oxidation of nitrided Si
Author :
Everaert, J.-L. ; Conard, T. ; Schaekers, M.
Author_Institution :
IMEC, Leuven
Abstract :
SiON gate dielectric is optimized for general purpose 65 nm node applications by using a first nitridation approach. A process parameter screening is done where the resulting SiON films are analyzed by angle resolved XPS and non-contact probing by Quantox. Good correlation between XPS and Quantox results are found. We demonstrate also correlation between Quantox results and transistor performance. It shows that the first nitridation approach is promising for reducing gate leakage resulting in better off-state current
Keywords :
CMOS integrated circuits; MOSFET; X-ray photoelectron spectra; dielectric thin films; interface states; nitridation; oxidation; plasma materials processing; rapid thermal processing; silicon compounds; 65 nm; 65 nm node; CMOS; KLA-Tencor Quantox; NMOS transistor; Si:B; SiON; angle resolved XPS; boron doping; dielectric film; equivalent oxide thickness; gate dielectric; gate leakage; interface trap density; noncontact electrical characterization; off-state current; p-type Si(100) wafer; plasma decoupled plasma nitridation; rapid thermal nitridation; rapid thermal oxidation; silicon oxynitride; Dielectric measurements; Gate leakage; Leakage current; Oxidation; Plasma density; Plasma materials processing; Plasma measurements; Plasma temperature; Rapid thermal processing; Temperature distribution;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2005. RTP 2005. 13th IEEE International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9223-X
DOI :
10.1109/RTP.2005.1613695
