Title :
Improvement of efficiency for red resonantcavity light-emitting diodes using periodic gain medium with modified electron stopped layers
Author :
Lysak, V.V. ; Park, C.Y. ; Park, K.W. ; Lee, Y.T.
Author_Institution :
Chonbuk Nat. Univ., Jeonju, South Korea
Abstract :
The analysis of electro-optical properties of 635 nm InGaP/InGaAlP resonant-cavity light-emitting diodes (RCLED) with AlGaAs mirrors is presented. We show that including the periodic gain medium with slightly p-doped electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in the quantum wells and decreasing the electrical field across the active layer.
Keywords :
III-V semiconductors; electro-optical devices; electron capture; indium compounds; light emitting diodes; mirrors; quantum well devices; InGaP-InGaAlP; electro-optical property; electron capture; electron stopped layer; mirror; periodic gain media; quantum wells; red resonant cavity light emitting diode; wavelength 635 nm; Cavity resonators; Light emitting diodes; Materials; Numerical models; Semiconductor process modeling; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Internet (COIN), 2010 9th International Conference on
Conference_Location :
Jeju
Print_ISBN :
978-1-4244-7181-2
Electronic_ISBN :
978-1-4244-8221-4
DOI :
10.1109/COIN.2010.5546680
