Title :
SIMNI SOI formed by high intensity nitrogen implantation
Author :
Poon, M.C. ; Wong, S.P. ; Lam, Y.W. ; Chu, P.K. ; Sin, J.K.O.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
We have found new profile and transport results on SIMNI SOI fabricated using nitrogen implantation with high beam current densities and wafer temperatures. Results suggest that the new method might provide an alternative and promising approach to produce SIMNI SOI with good quality stoichiometric nitride and surface Si layers
Keywords :
ion implantation; silicon-on-insulator; SIMNI SOI; nitrogen implantation; Annealing; Atomic layer deposition; Hall effect; Ion beams; Materials science and technology; Nitrogen; Physics; Silicon compounds; Silicon on insulator technology; Temperature;
Conference_Titel :
Electron Devices Meeting, 1996., IEEE Hong Kong
Print_ISBN :
0-7803-3091-9
DOI :
10.1109/HKEDM.1996.566298
