• DocumentCode
    3511676
  • Title

    SIMNI SOI formed by high intensity nitrogen implantation

  • Author

    Poon, M.C. ; Wong, S.P. ; Lam, Y.W. ; Chu, P.K. ; Sin, J.K.O.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
  • fYear
    1996
  • fDate
    35245
  • Firstpage
    25
  • Lastpage
    28
  • Abstract
    We have found new profile and transport results on SIMNI SOI fabricated using nitrogen implantation with high beam current densities and wafer temperatures. Results suggest that the new method might provide an alternative and promising approach to produce SIMNI SOI with good quality stoichiometric nitride and surface Si layers
  • Keywords
    ion implantation; silicon-on-insulator; SIMNI SOI; nitrogen implantation; Annealing; Atomic layer deposition; Hall effect; Ion beams; Materials science and technology; Nitrogen; Physics; Silicon compounds; Silicon on insulator technology; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1996., IEEE Hong Kong
  • Print_ISBN
    0-7803-3091-9
  • Type

    conf

  • DOI
    10.1109/HKEDM.1996.566298
  • Filename
    566298
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3511676