DocumentCode :
3511984
Title :
Design and simulation of 4GHz UWB CMOS LNA for RFID systems
Author :
Uddin, M. Jasim ; Sadeq, Muhammad Jafar ; Jalalifar, M.
Author_Institution :
Dept. of Comput. Sci. & Eng., Asian Univ. of Bangladesh, Dhaka, Bangladesh
fYear :
2012
fDate :
18-19 May 2012
Firstpage :
632
Lastpage :
635
Abstract :
Design, development and simulation results of an integrated 4 GHz ultra wide band CMOS low noise amplifier (LNA) are presented. The proposed amplifier is designed to use for RFID systems, especially in receiver applications. The amplifier employs an input band pass Chebyshev filter. It provides a forward gain (S21) of 18.42 dB and reverse gain (S12) of 4.01 dB with input reflection of only 9.9 dB while drawing 30 mW from a 1.5 V supply. A detailed analysis of the LNA architecture is presented, including a discussion on the effects of induced S-parameter analysis, phase shift and Smith chart analysis, and power transmission characteristics.
Keywords :
CMOS integrated circuits; Chebyshev filters; MMIC amplifiers; S-parameters; field effect MMIC; low noise amplifiers; radiofrequency identification; MMIC amplifiers; RFID systems; S-parameter analysis; Smith chart analysis; UWB CMOS LNA; frequency 4 GHz; gain 18.42 dB; gain 4.01 dB; input band pass Chebyshev filter; low noise amplifiers; phase shift analysis; power 30 mW; power transmission characteristics; radiofrequency identification; voltage 1.5 V; CMOS integrated circuits; Gain; Impedance matching; Noise; Radio frequency; Radiofrequency identification;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Informatics, Electronics & Vision (ICIEV), 2012 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-1153-3
Type :
conf
DOI :
10.1109/ICIEV.2012.6317545
Filename :
6317545
Link To Document :
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