A new LSI bonding technology ´Micron bump bonding assembly technology´

Author

Hatada, Kenzo ; Fujimoto, Hiroaki ; Kawakita, Tetsuro ; Ochi, Takao

Author_Institution

Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

1988

fDate

10-12 Oct. 1988

Firstpage

23

Lastpage

27

Abstract

A novel LSI chip bonding method called the micro-bump bonding method was developed for direct bonding between the large-scale integrated (LSI) electrode and the electrode provided on the circuit substrate. In this method, the shrinkage stress generated in light-setting insulating resin results in a compressive force on the LSI chip against the electrodes on the substrate. LSI chips having an interelectrode spacing of 10 mu m and 2320 electrodes in total were successfully gang bonded in a face-down form with high reliabilities.<>

Keywords

integrated circuit technology; large scale integration; lead bonding; 10 micron; LSI bonding technology; chip bonding method; direct bonding; face-down form; gang bonded; insulating resin; micro-bump bonding method; reliabilities; shrinkage stress; Assembly; Bonding forces; Circuits; Costs; Electrodes; Insulation; Large scale integration; Resins; Substrates; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium, 1988, Design-to-Manufacturing Transfer Cycle. Fifth IEEE/CHMT International

Conference_Location

Lake Buena Vista, FL, USA

Type

conf

DOI

10.1109/EMTS.1988.16142

Filename

16142