DocumentCode :
3512172
Title :
A new silicon-on-glass process for integrated sensors
Author :
Spangler, L.J. ; Wise, K.D.
Author_Institution :
Center for Integrated Sensors & Circuits, Michigan Univ., Ann Arbor, MI, USA
fYear :
1988
fDate :
6-9 June 1988
Firstpage :
140
Lastpage :
143
Abstract :
A process is reported for the formation of high-performance thin single-crystal silicon films on glass substrates. The process utilizes the electrostatic bonding of a silicon wafer to glass and subsequent etching of the silicon to form films having thickness controlled from less than 2 mu m to over 20 mu m. The use of Corning 1729 glass substrates yields an excellent thermal expansion match to the silicon film and allows the use of postbond processing temperatures for the films of as high as 800 degrees C, allowing the formation of both MOS and bipolar device structures. Thus, integrated circuitry can be incorporated in dissolved-wafer sensing structures. A variety of related processes are also possible where some or all of the silicon device processing is performed at high temperature before bonding to the glass.<>
Keywords :
bipolar integrated circuits; electric sensing devices; elemental semiconductors; etching; field effect integrated circuits; glass; integrated circuit technology; joining processes; semiconductor technology; semiconductor-insulator boundaries; silicon; surface treatment; 2 to 20 micron; 800 degC; Corning 1729 glass substrates; MOS; bipolar device structures; dissolved-wafer sensing structures; electrostatic bonding; etching; postbond processing; thermal expansion match; Electrostatics; Etching; Glass; Integrated circuit yield; Semiconductor films; Silicon; Substrates; Temperature sensors; Thickness control; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
Type :
conf
DOI :
10.1109/SOLSEN.1988.26461
Filename :
26461
Link To Document :
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