DocumentCode :
3512179
Title :
Silicon fusion bonding for pressure sensors
Author :
Petersen, K. ; Barth, P. ; Poydock, J. ; Brown, J. ; Mallon, J., Jr. ; Bryzek, J.
Author_Institution :
NovaSensor, Fremont, CA, USA
fYear :
1988
fDate :
6-9 June 1988
Firstpage :
144
Lastpage :
147
Abstract :
Two novel processes for fabricating silicon piezoresistive pressure sensors are presented. The chips described are used to demonstrate an important silicon/silicon bonding technique called silicon fusion bonding (SFB). Using this technique, single-crystal silicon wafers can be reliably bonded with near-perfect interfaces without the use of intermediate layers. Pressure transducers fabricated with SFB exhibit greatly improved performance over devices made with conventional processes. SFB is also applicable to many other microchemical structures.<>
Keywords :
electric sensing devices; elemental semiconductors; piezoelectric transducers; pressure transducers; semiconductor technology; silicon; SFB; Si-Si bond; fusion bonding; microchemical structures; piezoresistive pressure sensors; Anisotropic magnetoresistance; Etching; Fabrication; Fusion power generation; Glass; Mechanical sensors; Micromechanical devices; Sensor fusion; Silicon; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
Type :
conf
DOI :
10.1109/SOLSEN.1988.26462
Filename :
26462
Link To Document :
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