Polysilicon microbridge fabrication using standard CMOS technology

A technique is described for fabricating polysilicon microbridges using a standard industrial CMOS process. The introduction of layout methodologies enables the authors to fabricate CMOS compatible microbridge structures requiring only one additional postprocessing step. This step involves etching of the field oxide below the polysilicon layer in CMOS process which is equivalent to the sacrificial layer that is typical of any microbridge fabrication procedure.<>