Specific contact resistance measurements of metal-semiconductor junctions

Author

Stavitski, N. ; van Dal, M.J.H. ; Wolters, R.A.M. ; Kovalgin, A.Y. ; Schmitz, J.

Author_Institution

MESA+ Inst. for Nanotechnol., Twente Univ., Enschede, Netherlands

fYear

2006

fDate

6-9 March 2006

Firstpage

13

Lastpage

17

Abstract

Our research comprises the manufacturing of test structures to characterize the metal-semiconductor junctions with a number of techniques and materials. An extensive subsequent physical and electrical testing of the junctions is carried out. We present our first results on specific silicide-to-diffusion contact resistance characterization using the known Scott´s transmission line model (TLM) and our approach, considering particular geometry, with NiSi and PtSi as the silicides.

Keywords

contact resistance; electric resistance measurement; semiconductor-metal boundaries; Scott transmission line model; contact resistance measurements; electrical testing; metal-semiconductor junctions; physical testing; silicide-to-diffusion contact resistance; Contact resistance; Electrical resistance measurement; Inorganic materials; Power transmission lines; Semiconductor materials; Silicides; Silicon; Testing; Transistors; Transmission line theory;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2006. ICMTS 2006. IEEE International Conference on

Print_ISBN

1-4244-0167-4

Type

conf

DOI

10.1109/ICMTS.2006.1614265

Filename

1614265